When a forward bias is applied to a p-n junction, the concentration of electrons on the p side?
Answer: Increases slightly
Explanation
When a forward bias is applied to a p-n junction:
The potential barrier decreases.
Electrons from the n-side move toward the p-side.
These electrons are minority carriers on the p-side.
As a result, the concentration of electrons on the p-side increases, but only slightly, since it's still a small number compared to the holes (which are majority carriers on the p-side).
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